| PART |
Description |
Maker |
| KM29N040T |
512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX27C4000A MX27C4000AMC-10 MX27C4000AMC-12 MX27C40 |
4M-BIT [512K x8] CMOS OTP ROM 512K X 8 OTPROM, 120 ns, PDSO32
ER 17C 17#16 PIN RECP WALL
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| AM29LV800BT90SCB AM29LV800BB70FIB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
512K X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MX29LV040CQI-70G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
|
Macronix International Co., Ltd.
|
| MX29LV040CTC-55R MX29LV040CTI-55R |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 32C408BRPFI-30 32C408BRPFS-30 32C408BRPFS-25 32C40 |
4 Megabit (512K x 8-Bit) SRAM 512K X 8 STANDARD SRAM, 30 ns, DFP36
|
Maxwell Technologies, Inc
|
